LPDDR4x

Double Data Rate Synchronous Dynamic Random Access Memory is widely used in computers and consumer electronics. It achieves higher bandwidth than single data rate SDRAM by the technology of processing data on both the rising and falling edges of the clock signal.

Part No. Den. Org. Voltage Package Dim.(mm) Status Speed Temperature Model
SCE11U64324EF

64Gb

2048Mbx32

1.1V

TFBGA200

10x14.5

ES

3733/4266

 I A3 A2

SCE11U48324AF

48Gb

1536Mbx32

1.1V

TFBGA200

10x14.5

ES

3733/4266

 I A3 A2

SCE11U32322FF

32Gb

1024Mbx32

1.1V

TFBGA200

10x14.5

ES

3733/4266

 I A3 A2

SCE11U16320FF

16Gb

512Mbx32

1.1V

TFBGA200

10x14.5

ES

3733/4266

 I A3 A2

SCB11R32324CF

32Gb

1024Mbx32

1.1V

TFBGA200

10x14.5

Sample

3733/4266

C

SCB11R24324CF

24Gb

768Mbx32

1.1V

TFBGA200

10x14.5

MP

3733/4266

C

SCB11R16322CF

16Gb

512Mbx32

1.1V

TFBGA200

10x14.5

MP

3733/4266

C

SCB11R32322EF

请选择

1024Mbx32

1.1V

TFBGA200

10x14.5

MP

3733/4266

C I

SCE11U32322EF

32Gb

请选择

请选择

请选择

请选择

Sample

请选择

请选择

SCE11R8G322AF-

8Gb

256Mbx32

1.1V

TFBGA200

10x14.5

MP

3200/2400/1600

 I A3 A2

IBIS

SCE11R4G160AF-

4Gb

256Mbx16

1.1V

TFBGA200

10x14.5

MP

3200/2400/1600

 I A3 A2 A1

IBIS

SCE11R4G320AF-

4Gb

128Mbx32

1.1V

TFBGA200

10x14.5

MP

3200/2400/1600

 I A3 A2 A1

IBIS

SCE11R2G160AF-

2Gb

128Mbx16

1.1V

TFBGA200

10x14.5

MP

3200/2400/1600

 I A3 A2 A1

IBIS

Notes

  • Temperature Specification:

    C = Commercial Temperature chip (DDR2, DDR3, DDR4: 0°C ~ +95°C; LPDDR2: 0°C ~ +85°C;SDR, DDR: 0°C ~ +70°C)

    I = Industrial Temperature chip (DDR2, DDR3: -40°C ~ +95°C; SDR, DDR, LPDDR2, LPDDR4: -40°C ~ +85°C)

    A1 = Automotive grade 1(-40°C ~ +125°C)

    A2 = Automotive grade 2(-40°C ~ +105°C)

    A25 = Automotive grade 2(-40°C ~ +115°C)

    A3 = Automotive grade 3(-40°C ~ +95°C);LPDDR4(-40°C ~ +85°C)