DDR4

Compared to DDR3, DDR4 significantly enhances performance by increasing the core frequency and the number of Bank Groups and supports larger capacities. Simultaneously, it achieves lower power consumption by operating at a lower supply voltage. Additionally, DDR4 introduces new features such as CRC (Cyclic Redundancy Check), CA parity, DBI (Data Bus Inversion), and temperature-compensated refresh (TCSE/TCAR). These additions not only reduce DDR4's power consumption in use but also enhance signal integrity and improve the reliability of data transmission and storage. 

Part No. Den. Org. Voltage Package Dim.(mm) Status Speed Temperature Model
SCB12Q4G160BF

4Gb

256Mbx16

1.2V

FBGA96

7.5x13

MP

3200/2666

C I

IBIS

SCB12Q4G160AF

4Gb

256Mbx16

1.2V

TFBGA96

7.5x13.5

MP

2666

I

IBIS

Notes

  • Temperature Specification:

    C = Commercial Temperature chip (DDR2, DDR3, DDR4: 0°C ~ +95°C; LPDDR2: 0°C ~ +85°C;SDR, DDR: 0°C ~ +70°C)

    I = Industrial Temperature chip (DDR2, DDR3: -40°C ~ +95°C; SDR, DDR, LPDDR2, LPDDR4: -40°C ~ +85°C)

    A1 = Automotive grade 1(-40°C ~ +125°C)

    A2 = Automotive grade 2(-40°C ~ +105°C)

    A25 = Automotive grade 2(-40°C ~ +115°C)

    A3 = Automotive grade 3(-40°C ~ +95°C);LPDDR4(-40°C ~ +85°C)